Semiconductor device and MIM capacitor

ABSTRACT

An MIM capacitor comprises first and second conductor patterns embedded in a first interlayer insulation film so as to extend continuously in a mutually opposing relationship and forming a part of a comb-shaped capacitor pattern, and third and fourth conductor patterns formed in a second interlayer insulation film separated from the first interlayer insulation film by a via-insulation film, such that the third and fourth conductor patterns extend in the second layer interlayer insulation film continuously in a mutually opposing relationship as a part of the comb-shaped capacitor pattern, wherein there is formed a fifth conductor pattern extending in the via-insulation film continuously in correspondence to the first and third conductor patterns so as to connect the first and third conductor patterns continuously, and wherein there is formed a sixth conductor pattern extending in the via-insulation film continuously in correspondence to the second and fourth conductor patterns so as to connect the second and fourth conductor patterns continuously.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a Divisional application of U.S. applicationSer. No. 11/157,823, filed on Jun. 22, 2005, which is based on Japanesepriority application No. 2005-078012 filed on Mar. 17, 2005, the entirecontents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention generally relates to semiconductor devices andmore particularly to a semiconductor device having a capacitor.

A so-called MIM (metal-insulator-metal) capacitor is used extensively asa capacitance element in various analog circuits including A/Dconverters or semiconductor integrated circuits that includes a pumpcircuit of a flash memory.

Such an MIM capacitor is generally integrated into a multilayerinterconnection structure such that the MIM capacitor constitutes a partof the multilayer interconnection structure.

FIG. 1 shows an example of a conventional MIM capacitor.

Referring to FIG. 1, the MIM capacitor is formed of a metal pattern M1constituting a first metal layer of a multilayer interconnectionstructure, a metal pattern M2 opposing the metal pattern M1 across aninterlayer insulation film not illustrated and constituting a secondmetal layer of the multilayer interconnection structure, and a metalpattern M3 opposing the metal pattern M2 across an interlayer insulationfilm not illustrated and constituting a third metal layer of themultilayer interconnection structure. Thereby, a capacitance C is formedabove and below the metal pattern M2.

In the illustrated example, the metal pattern M1 and the metal patternM3 are connected parallel with each other, and there is formed acapacitor having a capacitance value 2C such that the capacitor has themetal pattern M2 as a first electrode and the metal patterns M1 and M3as the second electrode.

With the semiconductor device having such an MIM capacitor, it should benoted that the capacitor itself is miniaturized with miniaturization ofthe semiconductor device, and thus, there arises a problem of securingsufficient capacitance, particularly for such highly miniaturizedcapacitors.

In order to secure sufficient capacitance value with such an MIMcapacitor integrated to the multilayer interconnection structure alsofor the case the area of the electrodes is reduced, it is necessary toreduce the thickness of the interlayer insulation film interposedbetween the metal patterns M1, M2 and M3. However, in the case the MIScapacitor is integrated to the multilayer interconnection structure,such decrease of film thickness of the interlayer insulation filminevitably leads to the problem of increased stray capacitance betweenthe interconnection patterns formed in the multilayer interconnectionstructure.

Because of such situations and circumstances, it has been difficult toreduce the size of the MIM capacitor shown in FIG. 1, and there has beencaused a problem at the time of designing a semiconductor integratedcircuit device that uses such an MIM capacitor.

Meanwhile, there is proposed an MIM capacitor shown in FIG. 2 that usesa comb-shaped electrode formed in a multilayer interconnectionstructure. Reference should be made to Patent Reference 1.

REFERENCES

-   (Patent Reference 1) Japanese Laid-Open Patent Application    2004-95754-   (Patent Reference 2) Japanese Laid-Open Patent Application    2004-241762

Referring to FIG. 2, there is formed a lower capacitor part M1 on alower interlayer insulation film not illustrated, wherein the lowercapacitor part M1 has comb-shaped electrodes M1 a and M1 b formed of afirst layer metal pattern. Further, there is formed an upper capacitorpart M2 on a second interlayer insulation film not illustrated such thatthe upper capacitor part M2 has comb-shaped electrodes M1 a and M1 b ofa second layer metal pattern. Further, the lower capacitor part M1 andthe upper capacitor part M2 are connected with each other by a number ofvia-plugs Via formed in the second interlayer insulation film.

According to such a construction, decrease of capacitance of the MIMcapacitor caused by the decrease of the electrode area can besuccessfully compensated by the reduced distance between the comb-shapedelectrodes M1 a and M1 b or the distance between the comb-shapedelectrodes M2 a and M2 b.

Further, according to the second construction, it becomes possible tosecure sufficient capacitance for the MIM capacitor even when thesemiconductor device is miniaturized, by forming capacitors above andbelow the interlayer insulation film and connecting the same in parallelby way of the via-plugs Via.

On the other hand, in the case the MIM capacitor of FIG. 2 isminiaturized, the comb-shaped electrodes M1 a and M2 b or M1 a and M1 bconstituting a capacitor in the upper capacitor part M2 or lowercapacitor part M1, are disposed with minute mutual separation, andbecause of this, the via-plugs Via on the respective comb-shapedelectrodes are disposed also with minute separation. Thereby, theelectric flux lines connecting these via-plugs Via shown in FIG. 3 maycause substantial stray capacitance, of which value is difficult toevaluate.

It should be noted that in the case of an A/D converter, a precision of5% or less is required for the capacitor used therein. Thus, such an MIMcapacitor cannot provide reliable operation of the A/D converter.Further, designing of circuit becomes difficult in view of the need oftolerating large error for the MIM capacitance.

SUMMARY OF THE INVENTION

In a first aspect, the present invention provides a semiconductor devicehaving an MIM capacitor in a multilayer interconnection structure, saidmultilayer interconnection structure comprising:

a first interconnection layer embedded in a first interlayer insulationfilm;

a second interlayer insulation film formed on said first interlayerinsulation film;

a third interlayer insulation film formed on said first interlayerinsulation film via said second interlayer insulation film;

a second interconnection layer embedded in said third interlayerinsulation film; and

a via-plug formed in said second interlayer insulation film so as toconnect said first interconnection layer to said second interconnectionlayer electrically,

said first interconnection layer comprising first and second conductorpatterns embedded in said first interlayer insulation film and extendingcontinuously in said first interlayer insulation film in a mutuallyopposing relationship,

said second interconnection layer comprising third and fourthinterconnection patterns embedded in said third interlayer insulationfilm respectively in correspondence to said first and second conductorpatterns, said third and fourth conductor patterns extendingcontinuously in said third interlayer insulation film in a mutuallyopposing relationship,

wherein said second interlayer insulation film includes a fifthconductor pattern embedded therein so as to extend continuously in saidsecond interlayer insulation film in correspondence to said first andthird conductor patterns, said fifth conductor pattern connecting saidfirst and third conductor patterns continuously, and

said second interlayer insulation film including a sixth conductorpattern embedded therein so as to extend continuously in said secondinterlayer insulation film in correspondence to said second and fourthconductor patterns, said sixth conductor pattern connecting said secondand fourth conductor patterns continuously,

said first and second conductor patterns, said third and fourthconductor patterns and said fifth and sixth conductor patterns formingtogether an MIM capacitor.

In another aspect, the present invention provides an MIM capacitor,comprising:

first and second conductor patterns embedded in a first insulation filmso as to extend in said first insulation film continuously in a mutuallyopposing relationship; and

third and fourth conductor patterns embedded in a third insulation filmformed on said first insulation film via a second insulation film, saidthird and fourth conductor patterns extending in said third insulationfilm continuously in a mutually opposing relationship,

wherein said second interlayer insulation film includes a fifthconductor pattern embedded therein so as to extend continuously in saidsecond interlayer insulation film in correspondence to said first andthird conductor patterns, said fifth conductor pattern connecting saidfirst and third conductor patterns continuously,

said second interlayer insulation film further including a sixthconductor pattern embedded therein so as to extend continuously in saidsecond interlayer insulation film in correspondence to said second andfourth conductor patterns, said sixth conductor pattern connecting saidsecond and fourth conductor patterns continuously.

According to the present invention, the first and second conductorpatterns form a capacitor in the first interconnection layer and thethird and fourth conductor patterns form a capacitor in the secondinterconnection layer, wherein the stray capacitance, formed betweenvia-plugs in the construction in which the first and third conductorpatterns and the second and fourth conductor patterns are connected witheach other by discrete via-plugs, is reduced by connecting the firstconductor pattern and the third conductor pattern continuously by thefifth conductor pattern extending in conformity with the pattern shapeand by connecting the second conductor pattern and the fourth conductorpattern continuously by the sixth conductor pattern extending along thepattern shape. Thereby, the MIM capacitor provides the designedcapacitance value. Because the capacitance is formed with the MIMcapacitor of the present invention between opposing conductor patternsin each of the interconnection layers, there occurs no decrease ofcapacitance value with device miniaturization, even in the case the MIMcapacitor is integrated into a multilayer interconnection structure.Further, it is possible to achieve device miniaturization withoutdecreasing the thickness of the interlayer insulation film. Thus, byusing the MIM capacitor of the present invention, it becomes possible tominiaturize the apparatus such as an A/D converter that requires exactcapacitance value for the capacitor formed therein. Further, by usingthe MIM capacitor of the present invention, it becomes possible torealize a desired boosting performance in a pump circuit of a flashmemory device even in the case the device is subjected tominiaturization. Further, the MIM capacitor of the present invention isuseful not only in silicon semiconductor devices but also in compoundsemiconductor devices such as MMIC.

Other objects and further features of the present invention will becomeapparent from the following detailed description when read inconjunction with the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an oblique view diagram showing the construction of an MIMcapacitor according to a related art;

FIG. 2 is an oblique view diagram showing the construction of an MIMcapacitor according to another related art;

FIG. 3 is a diagram explaining the problems of the MIM capacitor of FIG.2;

FIG. 4 is an oblique view diagram showing the construction of an MIMcapacitor according to a first embodiment of the present invention;

FIG. 5 is a diagram showing the cross-section of the MIC capacitor ofFIG. 4;

FIG. 6 is a diagram showing the construction of a semiconductor deviceaccording to a second embodiment of the present invention;

FIGS. 7A-7E are diagrams showing the fabrication process of thesemiconductor device of FIG. 6;

FIG. 8 is a diagram showing the construction of a semiconductor deviceaccording to a third embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION First Embodiment

FIG. 4 is an oblique view diagram showing the construction of an MIMcapacitor 10 according to a first embodiment of the present inventionwhile FIG. 5 is a cross-sectional view of the MIM capacitor 10 takenalong a line A-A′ of FIG. 4.

Referring to FIGS. 4 and 5, the MIM capacitor 10 is formed in amultilayer interconnection structure formed of a first interlayerinsulation film 11, a second interlayer insulation film 12 on the firstinterlayer insulation film 11, and a third interlayer insulation film onthe second interlayer insulation film, wherein the MIM capacitor 10 isformed of a comb-shaped capacitor pattern 11M embedded in the firstinterlayer insulation film 11 as a part of a first interconnection layerMetal-1, a comb-shaped capacitor pattern 13M embedded in the thirdinterlayer insulation film 13 as a part of a second interconnectionlayer Metal-3, and a connection part 12M also of a comb-shaped form andembedded in the second interlayer insulation film as a part of a vialayer Metal-2, wherein the connection part 12M connects the comb-shapedcapacitor pattern 11M with the comb-shaped capacitor pattern 13M.

It should be noted that the comb-shaped capacitor pattern 13M includes afirst comb-shaped electrode pattern 13A and a second comb-shapedelectrode pattern 13B forming together mutually opposing electrodefingers, wherein similar comb-shaped conductor patterns 12A and 12Bforming similar mutually opposing electrode fingers are formed also inthe connection part 12M and in the comb-shaped capacitor pattern 11Mrespectively. In the oblique view diagram of FIG. 4, only the electrodefingers of the uppermost comb-shaped electrode patterns 13A and 13B arerepresented.

As shown in the cross-sectional diagram of FIG. 5, the comb-shapedconductor pattern 12A is formed as a continuation part of thecomb-shaped electrode pattern 13A and the comb-shaped conductor pattern12B is formed as a continuation part of the comb-shaped electrodepattern 13B in the present embodiment, such that the comb-shapedconductor pattern 12A has the same shape and size to the comb-shapedelectrode pattern 13A and that the comb-shaped conductor pattern 12B hasthe same shape and size of the comb-shaped electrode pattern 13B.Further, the comb-shaped electrode patterns 11A and 11B are formed inthe interlayer insulation film 11 respectively in correspondence to thecomb-shaped conductor patterns 12A and 12B with the same shape and samesize.

Thereby, it should be noted that the comb-shaped electrode patterns 11Aand 11B have respective sidewall surfaces and bottom surfaces covered bya barrier metal film 11 a or 11 b of refractory metal or refractorymetal nitride, and similar barrier metal films 12 a and 12 b areprovided also to the comb-shaped conductor patterns 12A and 12B so as tocover the respective sidewall surfaces and the bottom surfaces. Becausethe comb-shaped conductor patterns 12A and 12B form the extension partsof the comb-shaped electrode patterns 13A and 13B, respectively, thebarrier metal films 12 a and 12 b also extend into the interlayerinsulation film 13 and covers the sidewall surfaces of the comb-shapedelectrode patterns 13A and 13B. In other words, there is formed nobarrier metal film between the comb-shaped conductor pattern 12A and thecomb-shaped electrode pattern 13A, and no barrier metal film is formedalso between the comb-shaped conductor pattern 12B and the comb-shapedelectrode pattern 13B. Further, the comb-shaped conductor pattern 12Amakes a contact with the comb-shaped electrode pattern 11A underneathvia the barrier metal film 12a, and the comb-shaped conductor pattern12B makes a contact with the underlying comb-shaped electrode pattern11B via the barrier metal film 12 b.

With the MIM capacitor 10 of such a construction, the comb-shapedconductor patterns 12A and 12B constituting the connection part 12M formalso a part of the comb-shaped capacitor pattern, and there is formed acapacitance C between the electrode finger of any of the comb-shapedelectrode patterns 11A-13A and a corresponding electrode finger of thecomb-shaped electrode patterns 11B-13B. Because such a capacitance Cincreases with decrease of distance between the opposing electrodefingers, the MIM capacitor can effectively compensate for the decreaseof capacitance of the capacitor area as a result of the deviceminiaturization.

Here, it should be noted that, contrary to the conventional artexplained with reference to FIGS. 2 and 3, electrical interconnectionbetween the comb-shaped electrode pattern 11A and the comb-shapedelectrode pattern 13A, or the comb-shaped electrode pattern 11B and thecomb-shaped electrode pattern 13B, is achieved not by way of thediscrete via-plugs but by way of the comb-shaped pattern 12A or 12Bextending continuously in conformity with the shape of the comb-shapedelectrode patterns above and below. Thereby, no stray capacitance isformed between the via-plugs, and the MIM capacitor 10 provides acapacitance of designed capacitance value. Here, it should be noted thatall of the comb-shaped electrode patterns 11A-13A and the comb-shapedelectrode patterns 11B-13B contribute to the formation of thecapacitance, and thus, it is possible to secure a larger capacitance ascompared with the conventional comb-shaped MIM capacitor explained withreference to FIGS. 2 and 3.

Second Embodiment

FIG. 6 shows the construction of a semiconductor device 20 according toa second embodiment of the present invention in which the MIM capacitor10 of FIGS. 4 and 5 is integrated to a multilayer interconnectionstructure.

Referring to FIG. 6, the semiconductor device 20 is formed on a siliconsubstrate 21, and a MOS transistor is formed in a device region 21Adefined on the silicon substrate 21 by a device isolation region 21I.The MOS transistor includes a source diffusion region 21 a, a draindiffusion region 21 b, a gate insulation film 22A and a gate electrode22B.

It should be noted that the gate electrode 22B of the MOS transistor iscovered with an insulation film 22 formed on the silicon substrate 21,and a multilayer interconnection structure of damascene structure isformed on the insulation film 22 in the form of lamination of the firstinterlayer insulation film 23, a first etching stopper film 23N, asecond interlayer insulation film 24, a second etching stopper film 24Nand a third interlayer insulation film 25. Typically, the interlayerinsulation films 23, 24 and 25 are formed of a low-K dielectric organicinsulation film including a porous film or organic SOG film, while it isalso possible to use an inorganic film such as an HSQ (hydrogensilsesquioxane) film or SiO₂ film for the interlayer insulation films.Further, the etching stopper films 23N and 24N are formed typically ofan SiN film or an SiC film.

With the multilayer interconnection structure of FIG. 6, aninterconnection trench is formed in the first interlayer insulation film23, and the interconnection trench is filled with a first layer metalinterconnection pattern 23M of Cu, or the like, via a barrier metal film23 a of a refractory metal such as Ta or Ti or a refractory metalnitride such as TaN or TiN.

Further, the third interlayer insulation film 25 is also formed with aninterconnection trench, and a metal interconnection pattern 25M of Cu,or the like, fills the interconnection trench via a barrier metal film25a similar to the barrier metal film 23 a. Thereby, it should be notedthat a Cu via-plug 24M extends from the metal interconnection pattern25M into the interlayer insulation film 24 as a part of the metalinterconnection pattern 25M and makes a contact with the interconnectionpattern 23M in the interlayer insulation film 23 electrically. Further,the barrier metal film 25 a covers the sidewall surface and the bottomsurface of the Cu via-plug 24M continuously, and the Cu via-plug 24Mmakes a contact with the surface of the Cu metal interconnection pattern23M via the barrier metal film 25 a.

In the present embodiment, it should be noted that the metalinterconnection pattern 25A has the shape and size identical to themetal interconnection pattern 23A. Further, the metal interconnectionpattern 25B has the shape and size identical to the shape and size ofthe metal interconnection pattern 23B.

Further, with the multilayer interconnection structure of FIG. 6, thereare formed comb-shaped Cu electrode patterns 23A and 23B in theinterlayer insulation film 23 in correspondence to the electrode fingers11A and 11B of the MIM capacitor 10 explained previously with referenceto FIGS. 4 and 5 in the state that the Cu electrode patterns 23A and 23Bare covered by the barrier metal film 23 a at the sidewall surface andbottom surface thereof. Further, intermediate Cu patterns 24A and 25A ofthe comb-shaped form are formed respectively in the interlayerinsulation films 24 and 25 in correspondence to the Cu electrode pattern23 in the state that the Cu intermediate patterns 24A and 25A arecovered with the barrier metal film 25 a. Further, in correspondence tothe Cu electrode pattern 23B, there are formed Cu intermediate patterns24B and 25B of the comb-shaped form respectively in the interlayerinsulation films 24 and 25 in the state that the Cu intermediatepatterns 24B and 25B are covered by the barrier metal film 25 a.

Here, the Cu pattern 24A forms an extension part of the comb-shaped Cuelectrode pattern 25A similarly to the via-plug 24M, except that the Cupattern 24A extends continuously in conformity with the shape of thecomb-shaped Cu electrode pattern 25A contrary to the via-plug 24M. Thus,the Cu pattern 24A has also the same shape and size to the Cu electrodepattern 23A and makes a continuous contact to the Cu electrode pattern23A.

Similarly, the Cu pattern 24B forms an extension part of the comb-shapedCu electrode pattern 25B similarly to the via-plug 24M, except that theCu pattern 24B extends continuously in conformity with the shape of thecomb-shaped Cu electrode pattern 25B contrary to the via-plugs 24M.Thus, the Cu pattern 24B has also the same shape and size to the Cuelectrode pattern 23B and makes a continuous contact to the Cu electrodepattern 23B.

Thus, with the present embodiment, the multilayer interconnectionstructure is integrated with the MIM capacitor having the constructionexplained with reference to FIGS. 3 and 4 that the MIM capacitor isformed of the first comb-shaped electrode including the electrodefingers of the comb-shaped Cu patterns 23A, 24A and 25A, and the secondcomb-shaped electrode including the electrode fingers of the comb-shapedCu patterns 23B, 24B and 25B.

FIGS. 7A-7E show the fabrication process of the semiconductor device 20of FIG. 6.

Referring to FIG. 7A, the MOS transistor is formed first on the deviceregion 21A of the silicon substrate 21 such that the MOS transistor hasthe source and drain diffusion regions 21 a and 21, the gate insulationfilm 22A and the gate electrode 23, and the interlayer insulation film23 is formed thereafter on the silicon substrate 21 via the insulationfilm 22.

In the step of FIG. 7A, an interconnection trench is formed in theinterlayer insulation film 23 together with a comb-shaped trench havinga shape corresponding to the comb-shaped pattern of the MIM capacitor10, wherein the comb-shaped trench thus formed is filled with a Cu layerafter covering the surface and the sidewall surface thereof by thebarrier metal film 23 a. Thereafter, excessive Cu layer is removed fromthe surface of the interlayer insulation film 23 by a CMP process. Thus,the surface of the Cu interconnection pattern 23M and the surface of theCu patterns 23A and 23B form a planarized surface coincident to thesurface of the interlayer insulation film 23.

Next, in the step of FIG. 7B, the etching stopper film 23N, theinterlayer insulation film 24, the etching stopper film 24N and theinterlayer insulation film 25 are formed on the interlayer insulationfilm 23 consecutively, and an interconnection trench 25G is formed inthe interlayer insulation film 25 in the step of FIG. 7C incorrespondence to the interconnection pattern 25M such that the etchingstopper film 24N is exposed. At the same time, the comb-shaped trenches25TA and 25TB are formed in the interlayer insulation film 25 incorrespondence to the Cu patterns 25A and 25B such that the etchingstopper film 24N is exposed.

Further, in the step of FIG. 7D, a via-hole 24V is formed in theinterconnection trench 25G exposing the etching stopper film 24N suchthat the via-hole 24V exposes the etching stopper film 23N, and at thesame time, the comb-shaped trenches 25TA and 25TB, exposing the etchingstopper film 24N, are extended so as to expose the etching stopper film23N.

Further, in the step of FIG. 9E, the part of the etching stopper film23N exposed at the bottom of the interconnection trench 25G, at thebottom of the via hole 24V and at the bottom of the comb-shaped trenches25TA and 25TB is removed, such that the interconnection pattern 23M andthe comb-shaped Cu patterns 23A and 23B are exposed. Further, theinterconnection trench 25G, the via-hole 24V and the comb-shapedtrenches 25TA and 25TB are filled with a Cu layer after covering thesidewall surface and bottom surface thereof with the barrier metal film25 a. Further, by removing excessive Cu layer on the interlayerinsulation film 25 by a CMP process, the structure explained previouslywith reference to FIG. 6 is obtained.

In the present embodiment, it is possible to integrate the MIM capacitor10 of FIGS. 4 and 5 into the multilayer interconnection structure of thesemiconductor integrated circuit device, and it becomes possible tosecure a sufficient capacitance even when the semiconductor integratedcircuit device is miniaturized without decreasing the thickness of theinterlayer insulation films 24 and 25.

Because the comb-shaped Cu pattern 23A or 23B is connected to thecorresponding comb-shaped Cu pattern 25A or 25B continuously by usingthe comb-shaped Cu pattern 24A or 24B, there arises no such a difficultyof evaluating the stray capacitance as in the case these comb-shapedpatterns are connected by discrete via-plugs, and it becomes possible torealize a capacitance value controlled precisely to the designedcapacitance value.

Third Embodiment

FIG. 8 is a diagram showing the construction of a semiconductor device40 according to a third embodiment of the present invention, whereinthose parts corresponding the parts described previously are designatedby the same reference numerals and the description thereof will beomitted.

Referring to FIG. 8, the present invention does not use dual damasceneprocess for formation of the multilayer interconnection structure.

More specifically, there is formed an Al interconnection pattern 23M inthe interlayer insulation film 23 by a single damascene process andanother Al interconnection pattern 25M is formed in the interlayerinsulation film 25 by a single damascene process, wherein the Alinterconnection pattern 23M and the Al interconnection pattern 25M areconnected by a W (tungsten) plug 24W formed in the interlayer insulationfilm 24.

Similarly, the present invention uses an Al pattern for the comb-shapedpatterns 23A and 25A or comb-shaped patterns 23B and 25B, and a Wpattern is used for the comb-shaped patterns 24A and 24B that connectsthe upper and lower comb-shaped patterns.

It should be noted that such W plugs or W patterns can be formed at thetime the interlayer insulation film 24 is formed on the interlayerinsulation film 23 by filling a via-hole or comb-shaped trench formed inthe interlayer insulation film with a W film, followed by a CMP processremoving unnecessary W film from the top surface of the interlayerinsulation film 24.

In the present embodiment, it should be noted that formation of theinterconnection patterns 23M and 23M, the comb-shaped patterns 23A and23B and the comb-shaped patterns 25A and 25B is not limited such asingle damascene process but also may be conducted according to otherprocesses. Further, the MIM capacitor of the present invention is usefulnot only in a silicon semiconductor device but also in a compoundsemiconductor device such as MMIC.

Further, the present invention is not limited to the embodimentsdescribed heretofore, but various variations may be made withoutdeparting from the scope of the invention.

1. A semiconductor device having an MIM capacitor in a multilayerinterconnection structure, said multilayer interconnection structurecomprising: a first interconnection layer embedded in a first interlayerinsulation film; a second interlayer insulation film formed on saidfirst interlayer insulation film; a third interlayer insulation filmformed over said first interlayer insulation film via said secondinterlayer insulation film; a second interconnection layer embedded insaid third interlayer insulation film; and a via-plug formed in saidsecond interlayer insulation film so as to connect said firstinterconnection layer to said second interconnection layer electrically,said first interconnection layer comprising first and second conductorpatterns embedded in said first interlayer insulation film and extendingcontinuously in said first interlayer insulation film in a mutuallyopposing relationship, said second interconnection layer comprisingthird and fourth interconnection patterns embedded in said thirdinterlayer insulation film respectively in correspondence to said firstand second conductor patterns, said third and fourth conductor patternsextending continuously in said third interlayer insulation film in amutually opposing relationship, wherein said second interlayerinsulation film includes a fifth conductor pattern embedded therein soas to extend continuously in said second interlayer insulation film incorrespondence to said first and third conductor patterns, said fifthconductor pattern connecting said first and third conductor patternscontinuously, said second interlayer insulation film further including asixth conductor pattern embedded therein so as to extend continuously insaid second interlayer insulation film in correspondence to said secondand fourth conductor patterns, said sixth conductor pattern connectingsaid second and fourth conductor patterns continuously, said first andsecond conductor patterns, said third and fourth conductor patterns andsaid fifth and sixth conductor patterns forming together an MIMcapacitor.
 2. The semiconductor device as claimed in claim 1, whereinsaid first, third and fifth conductor patterns have an identical shapeand an identical size, and said second, fourth and sixth conductorpatterns have an identical shape and an identical size.
 3. Thesemiconductor device as claimed in claim 1, wherein said fifth conductorpattern is formed in continuation to said third conductor pattern, saidfifth conductor pattern making a contact with said first conductorpattern at a bottom part thereof, said sixth conductor pattern is formedin continuation to said fourth conductor pattern, said sixth conductorpattern making a contact with said second conductor pattern at a bottompart thereof.
 4. The semiconductor device as claimed in claim 3, whereinsaid third and fourth conductor patterns being exposed at a surface ofsaid third interlayer insulation film, said third and fourth conductorpatterns having respective exposed surfaces flush with said surface ofsaid third interlayer insulation film.
 5. The semiconductor device asclaimed in claim 3, wherein said third conductor pattern has a sidewallsurface formed with a first barrier metal film, said first barrier metalfilm further covering a sidewall surface and a bottom surface of saidfifth conductor pattern continuously, and wherein said fourth conductorpattern has a sidewall surface covered by a second barrier metal film,said second barrier metal film covering a sidewall surface and a bottomsurface of said sixth conductor pattern continuously.
 6. Thesemiconductor device as claimed in claim 3, wherein there is formed afirst insulation film at an interface between said first interlayerinsulation film and said second interlayer insulation film as an etchingstopper, and wherein there is formed a second insulation film at aninterface between said second interlayer insulation film and said thirdinterlayer insulation film.
 7. The semiconductor device as claimed inclaim 1, wherein said fifth and sixth conductor patterns are formed of amaterial different from said third and fourth conductor patterns.
 8. Thesemiconductor device as claimed in claim 7, wherein said third andfourth conductor patterns have respective sidewall surfaces and bottomsurfaces covered by a refractory metal film.
 9. The semiconductor deviceas claimed in claim 1, wherein said first and second conductor patternsform a comb-shaped electrode pattern, and wherein said third and fourthconductor patterns and said fifth and sixth conductor patterns formrespective combs-shaped electrode patterns corresponding to saidcomb-shaped electrode pattern.